Abstract—Due to scaling of the channel length, SCEs and HCEs are becoming serious issues. To reduce these effects, electrically induced ultra-shallow source/drain junctions has been investigated using actual (Gaussian) source/drain doping profiles. In this paper the novel attributes of nano scale SOI MOSFETs with electrically induced source/drain junctions are presented with extensive simulation study. It has been found that the use of induced source/drain junctions is capable of controlling the short channel effects.

Index Terms—Electrically induced source/drain junctions, hot electron effect, short channel effects, silicon-on-Insulator.

The authors are with National Institute of Technology, Silchar, Assam - 788010 INDIA (email: santoshty@gmail.com).

Cite:Santosh Kumar Gupta and S. Baishya, "Design Considerations of Electrically Induced Source/Drain Junction SOI MOSFETs for the Reduced Short Channel and Hot Carrier Effects," International Journal of Computer and Electrical Engineering vol. 3, no.6, pp. 869-872, 2011.