Volume 3 Number 6 (Dec. 2011)
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IJCEE 2011 Vol.3(6): 869-872 ISSN: 1793-8163 DOI: 10.7763/IJCEE.2011.V3.435

Design Considerations of Electrically Induced Source/Drain Junction SOI MOSFETs for the Reduced Short Channel and Hot Carrier Effects

Santosh Kumar Gupta and S. Baishya
Abstract—Due to scaling of the channel length, SCEs and HCEs are becoming serious issues. To reduce these effects, electrically induced ultra-shallow source/drain junctions has been investigated using actual (Gaussian) source/drain doping profiles. In this paper the novel attributes of nano scale SOI MOSFETs with electrically induced source/drain junctions are presented with extensive simulation study. It has been found that the use of induced source/drain junctions is capable of controlling the short channel effects.

Index Terms—Electrically induced source/drain junctions, hot electron effect, short channel effects, silicon-on-Insulator.

The authors are with National Institute of Technology, Silchar, Assam - 788010 INDIA (email: santoshty@gmail.com).

Cite:Santosh Kumar Gupta and S. Baishya, "Design Considerations of Electrically Induced Source/Drain Junction SOI MOSFETs for the Reduced Short Channel and Hot Carrier Effects," International Journal of Computer and Electrical Engineering vol. 3, no.6, pp. 869-872, 2011.

General Information

ISSN: 1793-8163 (Print)
Abbreviated Title: Int. J. Comput. Electr. Eng.
Frequency: Quarterly
Editor-in-Chief: Prof. Yucong Duan
Abstracting/ Indexing: EI (INSPEC, IET), Ulrich's Periodicals Directory, Google Scholar, EBSCO, ProQuest, and Electronic Journals Library
E-mail: ijcee@iap.org

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