Volume 3 Number 2 (Apr. 2011)
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IJCEE 2011 Vol.3(2): 180-183 ISSN: 1793-8163 DOI: 10.7763/IJCEE.2011.V3.311

A Low Voltage, High Quality Factor Floating Gate Tunable Active Inductor with Independent Inductance and Quality Factor Tuning

Mahdi Ebrahimzadeh

Abstract—A CMOS active inductor that has a large quality factor and independent L and Q tuning capability is presented. The tunable active inductor has 0.8 V supply voltage. In this voltage this TAI shows a quality factor equal to 11400 and power dissipation of 1.8 mW. It has 1.4 GHz inductive bandwidth. The TAI has an interesting property that has an independent inductance and quality factor tuning.

Index Terms—Low voltage, floating gate, active inductor, high quality factor

Mahdi Ebrahimzadeh is with the Electrical Engineering Department, Iran University of Science and Technology (corresponding author to provide phone: +98-021-84977579; fax: +98-021-77240486; e-mail: mahdi.ebrahimzadeh@gmail.com).

Cite: Mahdi Ebrahimzadeh, "A Low Voltage, High Quality Factor Floating Gate Tunable Active Inductor with Independent Inductance and Quality Factor Tuning," International Journal of Computer and Electrical Engineering vol. 3, no. 2, pp. 180-183, 2011.

General Information

ISSN: 1793-8163 (Print)
Abbreviated Title: Int. J. Comput. Electr. Eng.
Frequency: Quarterly
Editor-in-Chief: Prof. Yucong Duan
Abstracting/ Indexing: EI (INSPEC, IET), Ulrich's Periodicals Directory, Google Scholar, EBSCO, ProQuest, and Electronic Journals Library
E-mail: ijcee@iap.org

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