Volume 4 Number 6 (Dec. 2012)
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IJCEE 2012 Vol.4(6): 892-895 ISSN: 1793-8163 DOI: 10.7763/IJCEE.2012.V4.629

Physically-Informed Correction of Instability (Drift)

Shahriar Jamasb
Abstract—A Physical model for the long-term deterministic behavior associated with instability (or drift) in pH-sensitive ion-selective field effect transistors (ISFET’s) has been employed to distinguish between drift and the inherent low-frequency (1/f) noise, both of which corrupt the sensor output signal. Based on this model, a physically-informed method for sensor signal enhancement in the time-domain has been proposed, which relies on proper windowing of the sensor output. The random-like evolution in time associated with a weak power-law relaxation towards equilibrium is the key aspect of the model for drift that is utilized in the proposed corrective scheme. Drift may be interpreted as a weakly chaotic behavior, exhibiting anomalous dynamics characterized by ageing, which reflects a weak (power-law) relaxation towards equilibrium.

Index Terms—1/f Noise, drift, instability, ISFET, physically-informed signal processing, power-law, weak chaos

Shahriar Jamasb is with the Biomedical Engineering Department, Hamedan University of Technology, Hamedan, Hamedan 65169-13418 Iran (e-mail: jamasbs@profs.hut.ac.ir).

Cite: Shahriar Jamasb, "Physically-Informed Correction of Instability (Drift)," International Journal of Computer and Electrical Engineering vol. 4, no. 6, pp. 892-895, 2012.

General Information

ISSN: 1793-8163 (Print)
Abbreviated Title: Int. J. Comput. Electr. Eng.
Frequency: Quarterly
Editor-in-Chief: Prof. Yucong Duan
Abstracting/ Indexing: EI (INSPEC, IET), Ulrich's Periodicals Directory, Google Scholar, EBSCO, ProQuest, and Electronic Journals Library
E-mail: ijcee@iap.org

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