Abstract—High operating temperatures infrared photo detectors are needed for improving the performance of these systems. To obtain high device performance at higher temperatures, the thermally generated noise required to be reduced. Minority-carrier extraction and exclusion techniques are the approaches for decreasing the thermal noise of infrared systems. In the present work, an Hg1-xCdxTe photodiode was studied and simulated for operation in the MWIR region. A simulation of the device was carried out by using ATLAS software from SILVACO® in order to study the performance of the photo detector at near room temperatures. The device was characterized in respect of energy band diagram, carrier concentration, doping profile, dark current and responsively.

Index Terms—HgCdTe, infrared photo detector, simulation.

Mohammad Nadimi is with the Department of Electrical Engineering,Iran University of Science and Technology, Tehran, Iran.(nadimi@ymail.com).
Ali Sadr is with the Department of Electrical Engineering, Iran University of Science and Technology, Tehran, Iran. (sadr@iust.ac.ir).

Cite: Mohammad Nadimi and Ali Sadr, "Modeling and Simulation of High Operating Temperature MWIR Photo Detector Based on Mercury Cadmium Telluride," International Journal of Computer and Electrical Engineering vol. 3, no. 4, pp. 597-599, 2011.