Volume 6 Number 3 (Jun. 2014)
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IJCEE 2014 Vol.6 (3): 271-274 ISSN: 1793-8163
DOI: 10.7763/IJCEE.2014.V6.837

Gain-Clamped Quantum Dot Semiconductor Optical Amplifiers

Omar Qasaimeh
Abstract—The linear optical gain of gain-clamped quantum dot semiconductor optical amplifiers (GCSOAs) has been investigated and studied for different energy detuning, doping concentration and different device length. Our analysis shows that large linear optical gain can be obtained when the laser emits 90meV above the ground state and the amplifier operates at the ground state which results in 81meV separation between the laser and amplifier energy. We find that larger detuning between the laser and amplifier energy result in gain saturation. Also we find that for positive A L      doping the dots by P-type concentration enhances the linear optical gain while doping the dots by N-type concentration reduces the linear optical gain. While for negative A L      doping the dots by N-type concentration enhances the linear optical gain while doping the dots by P-type concentration reduces the linear optical gain.

Index Terms—Quantum dot, gain-clamped, linear, semiconductor optical amplifier.

O. Qasaimeh is with the Electrical Engineering Department, Jordan University of Science and Technology, Irbid 22110 Jordan (e-mail: qasaimeh@just.edu.jo).

 

Cite:Omar Qasaimeh, "Gain-Clamped Quantum Dot Semiconductor Optical Amplifiers," International Journal of Computer and Electrical Engineering vol. 6, no.3, pp. 271-274, 2014.

General Information

ISSN: 1793-8163 (Print)
Abbreviated Title: Int. J. Comput. Electr. Eng.
Frequency: Quarterly
Editor-in-Chief: Prof. Yucong Duan
Abstracting/ Indexing: EI (INSPEC, IET), Ulrich's Periodicals Directory, Google Scholar, EBSCO, ProQuest, and Electronic Journals Library
E-mail: ijcee@iap.org

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