Volume 1 Number 2 (Jun. 2009)
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IJCEE 2009 Vol.1 (2): 104-106 ISSN: 1793-8163
DOI: 10.7763/IJCEE.2009.V1.15

GaAs pHEMT Cascode Low Noise Amplifier for Wireless Applications

Arjuna Marzuki, Norhapizin K, Amiza Rasmi, Mohd Azmi Ismail, Rasidah Sanusi, Ahmad Ismat Abdul Rahim, Mohamed Razman Yahya, Abdul Fatah Awang Mat, Zaliman Sauli, and Ali Yeon Md Shakaff

Abstract—This paper presents low noise amplifier (LNA) for wireless application which has been implemented in a 0.15μm GaAs pHEMT technology. The LNA was designed using cascode topology with feedback techniques which produces better gain and good stability over entire frequency. At 2.4 GHz, this amplifier achieves power gain of 23 dB, isolation of 35 dB and input reflection coefficient of -12 dB at 2.4 GHz. With operating voltage supply at 3V, the total current consumptions for the LNA is 18 mA.

Arjuna Marzuki is with the School of Electrical and Electronic Engineering,
Norhapizin K, Amiza Rasmi, Mohd Azmi Ismail, Rasidah Sanusi, Ahmad Ismat Abdul Rahim, Mohamed Razman Yahya, and Abdul Fatah Awang Mat are with Universiti Sains Malaysia, Seri Ampangan, 14300 Nibong Tebal, Penang, Malaysia.
Zaliman Sauli and Ali Yeon Md Shakaff are with the Telekom Research & Development Sdn Bhd, Malaysia School of Microelectronic Engineering, Universiti Malaysia Perlis

Cite: Arjuna Marzuki, Norhapizin K., Amiza Rasmi, Mohd Azmi Ismail, Rasidah Sanusi, Ahmad Ismat Abdul Rahim, Mohamed Razman Yahya, Abdul Fatah Awang Mat, Zaliman Sauli, and Ali Yeon Md Shakaff, "GaAs pHEMT Cascode  Low  Noise  Amplifier  for   Wireless  Applications,"  International  Journal  of  Computer  and  Electrical
Engineering
vol. 1, no. 2, pp. 104-106, 2009.

General Information

ISSN: 1793-8163
Frequency: Quarterly
Editor-in-Chief: Prof. Yucong Duan
Abstracting/ Indexing: EI (INSPEC, IET), Ulrich's Periodicals Directory, Google Scholar, EBSCO, ProQuest, and Electronic Journals Library
E-mail: ijcee@iap.org

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